SI4423DY-T1-E3 Vishay, SI4423DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4423DY-T1-E3
• Description: MOSFET P-CH 20V 10A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4423DY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 14A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 900mV @ 600µA
• Gate Charge (qg) @ Vgs: 175nC @ 5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -14A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 7.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4423DY-T1-E3TR

Si4423DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
I
D
T
Threshold Voltage
= 250 µA
J
- Temperature (°C)
25
10
-3
50
Limited by R
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
100
0.1
0.1
10
DS ( on)
100
10
1
0.1
-2
* V
*
Safe Operating Area, Junction-to-Case
125
GS
> minimum V
V
150
DS
Square Wave Pulse Duration (s)
Single Pulse
T
- Drain-to-Source Voltage (V)
C
10
1
= 25 °C
-1
GS
at which R
DS(on)
10
100
1
80
60
40
20
0
0.001
is specified
1 ms
10 ms
100 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
100
0.01
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
1
A
S09-0705-Rev. D, 27-Apr-09
= P
0.1
t
2
Document Number: 72085
DM
Z
th J A
100
th J A
t
t
1
2
(t )
= 70 °C/W
1
600
10