SI4423DY-T1-E3 Vishay, SI4423DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4423DY-T1-E3
• Description: MOSFET P-CH 20V 10A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4423DY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 14A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 900mV @ 600µA
• Gate Charge (qg) @ Vgs: 175nC @ 5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -14A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 7.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4423DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72085
S09-0705-Rev. D, 27-Apr-09
0.015
0.012
0.009
0.006
0.003
0.000
100
0.1
10
1
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 13 A
0.2
On-Resistance vs. Drain Current
= 10 V
25
8
V
T
SD
Q
J
= 150 °C
g
- Source-to-Drain Voltage (V)
I
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
16
50
0.6
V
GS
24
= 1.8 V
75
0.8
V
V
GS
GS
= 2.5 V
= 4.5 V
T
100
J
32
= 25 °C
1.0
1.2
125
40
12000
10000
0.030
0.024
0.018
0.012
0.006
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
- 5 0
0
0.0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 13 A
C
= 4.5 V
1.6
rss
4
T
0
J
V
V
GS
- Junction T emperature (°C)
DS
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
2 5
iss
Capacitance
C
3.2
oss
8
I
D
5 0
= 13 A
Vishay Siliconix
4.8
12
7 5
Si4423DY
100
www.vishay.com
6.4
16
125
150
8.0
20
3