IRFR9010TRL Vishay, IRFR9010TRL Datasheet - Page 2

• Manufacturer Part Number: IRFR9010TRL
• Description: MOSFET P-CH 50V 5.3A DPAK
• Manufacturer: Vishay

Specifications of IRFR9010TRL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 25W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 50 V
• Continuous Drain Current: 5.3 A
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Note
a. Mounting pad must cover heatsink surface area.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
J
= 25 °C, unless otherwise noted
a
a
SYMBOL
SYMBOL
R
V
t
t
C
R
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
g
Q
L
t
L
SM
t
I
t
t
on
thCS
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
V
V
V
T
Between lead,
6 mm (0.25") from
package and center of
die contact.
MOSFET symbol
showing the
integral reverse
p - n junction diode
DS
GS
GS
J
(Independent operating temperature)
= 25 °C, I
= 0.8 x max. rating, V
= - 10 V
T
= - 10 V
R
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
g
= 25 °C, I
V
MIN.
= 24 Ω, R
DS
V
V
V
-
-
-
V
DS
DD
f = 1.0 MHz, see fig. 9
DS
GS
TEST CONDITIONS
= max. rating, V
≤ - 50 V, I
= - 25 V, I
F
= V
I
= 0 V, I
D
= - 4,7 A, dI/dt = 100 A/μs
V
V
= - 4.7 A, V
V
GS
DS
S
(Independent operating
GS
D
GS
= - 5.3 A, V
= 5.6 Ω, see fig. 15
, I
= - 25 V,
= ± 20 V
rating, see fig. 16
= 0 V,
D
D
temperature)
I
DS
= - 250 μA
D
= - 250 μA
D
GS
= - 2.8 A
= - 4.7 A,
= - 2.8 A
= 0 V, T
DS
TYP.
GS
1.7
-
-
GS
= 0.8 x max.
= 0 V
G
G
= 0 V
J
b
= 125 °C
D
S
b
D
S
b
0.090
MIN.
- 2.0
- 50
MAX.
1.1
33
110
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.0
-
S10-1135-Rev. C, 10-May-10
Document Number: 91378
TYP.
0.35
0.22
240
160
1.7
6.1
2.0
3.9
6.1
4.5
7.5
30
47
13
35
75
-
-
-
-
-
-
-
-
- 1000
MAX.
± 500
- 250
- 4.0
- 5.3
- 5.5
0.52
- 18
160
S
0.5
9.1
3.0
5.9
9.2
71
20
59
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
)
nC
nH
μC
nA
μA
pF
ns
ns
Ω
S
A
V
V
V