IRFR9010TRL Vishay, IRFR9010TRL Datasheet - Page 6

• Manufacturer Part Number: IRFR9010TRL
• Description: MOSFET P-CH 50V 5.3A DPAK
• Manufacturer: Vishay

Specifications of IRFR9010TRL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 25W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 50 V
• Continuous Drain Current: 5.3 A
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
www.vishay.com
6
10 %
90 %
Fig. 15b - Switching Time Test Circuit
Fig. 15a - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
t
GS
d(on)
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
V
DS
t
r
D.U.T.
R
D
t
d(off)
t
f
+
-
V
DD
- 10 V
V
Fig. 16a - Basic Gate Charge Waveform
G
12 V
V
Fig. 16b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Q
Current regulator
GS
0.2 µF
- 3 mA
Current sampling resistors
Charge
50 kΩ
Q
Q
GD
G
0.3 µF
I
G
S10-1135-Rev. C, 10-May-10
Document Number: 91378
D.U.T.
I
D
+
-
V
DS