IRFBC40ASPBF Vishay, IRFBC40ASPBF Datasheet

MOSFET N-CH 600V 6.2A D2PAK

IRFBC40ASPBF

Manufacturer Part Number
IRFBC40ASPBF
Description
MOSFET N-CH 600V 6.2A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFBC40ASPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3.7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1036pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
6.2A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6.2 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBC40ASPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBC40ASPBF
Quantity:
15 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. Uses IRFBC40A/SiHFBC40A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91113
S10-2433-Rev. B, 25-Oct-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
 6.2 A, dI/dt  88 A/μs, V
G D
D
()
2
PAK (TO-263)
S
J
= 25 °C, L = 29.6 mH, R
a, e
e
c, e
a
a
DD
b
V
GS
 V
= 10 V
g
DS
= 25 , I
G
, T
N-Channel MOSFET
J
Single
D
SiHFBC40AS-GE3
IRFBC40ASPbF
SiHFBC40AS-E3
IRFBC40AS
SiHFBC40AS
 150 °C.
600
42
10
20
2
PAK (TO-263)
AS
C
= 6.2 A (see fig. 12).
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
GS
1.2
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
Definition
Requirement
Ruggedness
and Current
D
SiHFBC40ASTRL-GE3
IRFBC40ASTRLPbF
SiHFBC40ASTL-E3
IRFBC40ASTRL
SiHFBC40ASTL
2
PAK (TO-263)
SYMBOL
IRFBC40AS, SiHFBC40AS
T
dV/dt
oss
J
V
V
E
E
I
I
, T
P
DM
I
AR
GS
DS
AS
AR
D
D
stg
Specified
a
a
a
a
a
g
results in Simple Drive
- 55 to + 150
LIMIT
300
D
SiHFBC40ASTRR-GE3
IRFBC40ASTRRPbF
SiHFBC40ASTR-E3
IRFBC40ASTRR
SiHFBC40ASTR
± 30
600
570
125
6.2
3.9
1.0
6.2
6.0
25
13
2
PAK (TO-263)
Vishay Siliconix
d
www.vishay.com
a
a
a
a
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
a
1

Related parts for IRFBC40ASPBF

IRFBC40ASPBF Summary of contents

Page 1

... Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES S • Single Transistor Forward N-Channel MOSFET PAK (TO-263) D PAK (TO-263) SiHFBC40AS-GE3 SiHFBC40ASTRL-GE3 IRFBC40ASPbF IRFBC40ASTRLPbF SiHFBC40AS-E3 SiHFBC40ASTL-E3 IRFBC40AS IRFBC40ASTRL SiHFBC40AS SiHFBC40ASTL = 25 °C, unless otherwise noted ° ...

Page 2

... IRFBC40AS, SiHFBC40AS Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91113 S10-2433-Rev. B, 25-Oct-10 IRFBC40AS, SiHFBC40AS Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFBC40AS, SiHFBC40AS Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91113 S10-2433-Rev. B, 25-Oct-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91113 S10-2433-Rev. B, 25-Oct- Driver + - IRFBC40AS, SiHFBC40AS Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFBC40AS, SiHFBC40AS Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12d - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µF D.U. Current sampling resistors Fig ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91113. Document Number: 91113 S10-2433-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords