IRFBC40ASPBF Vishay, IRFBC40ASPBF Datasheet - Page 5

• Manufacturer Part Number: IRFBC40ASPBF
• Description: MOSFET N-CH 600V 6.2A D2PAK
• Manufacturer: Vishay

Specifications of IRFBC40ASPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1036pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBC40ASPBF

Document Number: 91113
S10-2433-Rev. B, 25-Oct-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
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Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Fig. 12b - Unclamped Inductive Waveforms
IRFBC40AS, SiHFBC40AS
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Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
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Vishay Siliconix
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www.vishay.com
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