IRFIBE20G Vishay, IRFIBE20G Datasheet - Page 2

• Manufacturer Part Number: IRFIBE20G
• Description: MOSFET N-CH 800V 1.4A TO220FP
• Manufacturer: Vishay

Specifications of IRFIBE20G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 840mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 27 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIBE20G

IRFIBE20G, SiHFIBE20G
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
C
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= 10 V
= 10 V
= 25 °C, I
= 640 V, V
V
V
V
V
R
V
f = 1.0 MHz, see fig. 5
TYP.
DS
DD
TEST CONDITIONS
DS
DS
GS
G
-
-
= 18 Ω
= 10 V, I
= 800 V, V
= 400 V, I
F
= V
= 0 V, I
V
V
f = 1.0 MHz
see fig. 10
= 1.8 A, dI/dt = 100 A/µs
V
GS
DS
S
GS
I
GS
GS
D
= 1.4 A, V
= ± 20 V
, I
= 25 V,
= 1.8 A, V
,
= 0 V,
see fig. 6 and 13
= 0 V, T
R
D
D
D
D
= 250 µA
I
D
= 250 µA
= 0.84 A
D
= 230 Ω,
GS
= 1.8 A,
= 0.84 A
b
D
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
G
= 0 V
b
= 400 V,
b
MAX.
D
S
b
b
D
S
4.1
65
b
MIN.
800
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-81275-Rev. A, 16-Jun-08
Document Number: 91183
TYP.
0.98
0.94
530
150
380
8.2
4.5
7.5
90
12
17
58
27
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
S
100
500
570
4.0
6.5
5.0
1.4
5.6
1.4
1.4
38
21
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V