IRFIBE20G Vishay, IRFIBE20G Datasheet - Page 7

• Manufacturer Part Number: IRFIBE20G
• Description: MOSFET N-CH 800V 1.4A TO220FP
• Manufacturer: Vishay

Specifications of IRFIBE20G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 840mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 27 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIBE20G

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91183.
Document Number: 91183
S-81275-Rev. A, 16-Jun-08
Re-applied
voltage
Reverse
recovery
current
+
-
R
G
D.U.T.
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig.14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
IRFIBE20G, SiHFIBE20G
V
V
I
SD
GS
DD
= 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
7