APT30M85BVRG Microsemi Power Products Group, APT30M85BVRG Datasheet - Page 3

• Manufacturer Part Number: APT30M85BVRG
• Description: MOSFET N-CH 300V 40A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT30M85BVRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 4950pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
60
50
40
30
20
10
40
32
24
16
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
8
0
-50
25
V
0
0
V
APT30M85BVR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-25
T
V
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V GS =6V, 7V, 10V & 15V
GS
J
T J = +125 C
T
, JUNCTION TEMPERATURE ( C)
30
T J = +25 C
50
C
= 10V
D
, CASE TEMPERATURE ( C)
[Cont.]
2
0
T J = +125 C
T J = +25 C
25
60
T J = -55 C
75
50
4
100
90
75
T J = -55 C
5.5V
4.5V
100 125 150
4V
5V
6
120
125
150
150
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.20
1.15
1.10
1.05
1.00
0.95
0.90
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
60
50
40
30
20
10
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
T
I
J
= 10V @ 0.5 I
D
NORMALIZED TO
25
, JUNCTION TEMPERATURE ( C)
T
, DRAIN CURRENT (AMPERES)
C
1
, CASE TEMPERATURE ( C)
V GS =10V
0
0
50
DS
25
25
D
(ON) vs DRAIN CURRENT
2
[Cont.]
V GS =7V
V GS =10V
75
50
50
V GS =15V
3
75
75 100 125 150
100
V GS =20V
100 125 150
4
125
5.5V
4.5V
4V
5V
6V
150
5