APT5016BFLLG Microsemi Power Products Group, APT5016BFLLG Datasheet - Page 3

• Manufacturer Part Number: APT5016BFLLG
• Description: MOSFET N-CH 500V 30A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5016BFLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 2833pF @ 25V
• Power - Max: 329W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Junction
temp. (°C)
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
30
25
20
15
10
0
5
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
(watts)
Power
V
FIGURE 4, TRANSFER CHARACTERISTICS
V DS > I D (ON) x R DS (ON)MAX.
GS
V
-25
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
I
GS
D
J
T
= 15A
, JUNCTION TEMPERATURE (°C)
50
= 10V
2
C
T J = +125°C
, CASE TEMPERATURE (°C)
T J = +25°C
0
25
75
RC MODEL
4
50
0.0174
0.143
0.219
100
6
75
100 125 150
T J = -55°C
125
8
0.00401F
0.00641F
0.158F
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.05
0.95
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
80
60
40
20
0
-50
-50
0
0
V
DS
FIGURE 5, R
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
V
T
15 &10V
NORMALIZED TO
GS
10
I
J
D
5
T
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
= 10V @ 15A
C
V GS =10V
, CASE TEMPERATURE (°C)
0
0
10
20
DS
25
25
(ON) vs DRAIN CURRENT
30
50
15
50
75
75
V GS =20V
20
40
100 125 150
8V
7.5V
100 125 150
7V
25
50
6.5V
6V
5.5V
30
60