APT5014BFLLG Microsemi Power Products Group, APT5014BFLLG Datasheet - Page 4

MOSFET N-CH 500V 35A TO-247

APT5014BFLLG

Manufacturer Part Number
APT5014BFLLG
Description
MOSFET N-CH 500V 35A TO-247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT5014BFLLG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 17.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
3261pF @ 25V
Power - Max
403W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT5014BFLLG
Manufacturer:
APT
Quantity:
460
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
1000
140
800
600
400
200
60
50
40
30
20
10
50
10
16
14
12
10
FIGURE 16, SWITCHING ENERGY vs CURRENT
1
8
6
4
2
0
0
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
1
0
0
0
V
V
R
T
L = 100µH
E
diode reverse recovery.
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
T C =+25°C
T J =+150°C
SINGLE PULSE
DS
DD
J
G
ON
LIMITED BY R DS (ON)
DD
J
G
OPERATION HERE
= 125°C
= 5Ω
= 125°C
I
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 5Ω
D
= 333V
includes
= 333V
= 35A
10
10
Q
20
g
, TOTAL GATE CHARGE (nC)
5
t
d(on)
20
20
V DS =250V
10
40
I
I
E
D
D
E
V DS =100V
on
30
30
off
(A)
(A)
60
50 100
40
40
t
d(off)
V DS =400V
80
50
50
100
500
60
60
10mS
100µS
1mS
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
10,000
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1400
1200
1000
100
200
100
800
600
400
200
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
50
10
70
60
50
40
30
20
10
5
1
0.3
0
0
0
0
0
V
V
V
I
T
L = 100µH
E
diode reverse recovery.
V
R
T
L = 100µH
D
DS
SD
J
J
DD
ON
DD
G
= 35A
= 125°C
= 125°C
5
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 333V
= 333V
includes
E
0.5
10
T J =+150°C
on
R
10
10
G
, GATE RESISTANCE (Ohms)
15 20 25 30 35 40
0.7
20
20
I
D
0.9
30
(A)
T J =+25°C
t
30
r
t
f
1.1
40
40
1.3
50
E
off
C iss
C oss
45 50
C rss
1.5
50
60

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