APT5010LLLG Microsemi Power Products Group, APT5010LLLG Datasheet - Page 3

• Manufacturer Part Number: APT5010LLLG
• Description: MOSFET N-CH 500V 46A TO-264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5010LLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 4360pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
Case temperature. (°C)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
-50
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
25
0
V DS > I D (ON) x R DS (ON)MAX.
V
FIGURE 4, TRANSFER CHARACTERISTICS
GS
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
Junction
temp. (°C)
1
-25
I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
D
T
= 23A
J
T
= 10V
T J = +125°C
50
, JUNCTION TEMPERATURE (°C)
2
(watts)
Power
C
T J = +25°C
, CASE TEMPERATURE (°C)
0
3
25
75
4
50
5
RC MODEL
100
6
75
0.0131
0.0789
0.0811
0.230
7
T J = -55°C
100 125 150
125
8
9
150
10
0.00266F
0.00584F
0.0796F
0.460F
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.05
0.95
1.15
1.10
1.05
1.00
0.95
0.90
0.85
120
100
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
80
60
40
20
0
-50
-50
0
0
V
DS
FIGURE 5, R
-25
-25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
I
V
5
J
D
NORMALIZED TO
GS
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
C
20
15 &10V
, CASE TEMPERATURE (°C)
= 10V @ 23A
0
0
V GS =10V
10
DS
25
25
(ON) vs DRAIN CURRENT
15
40
50
50
75
75
8V
7.5V
20
V GS =20V
100 125 150
100 125 150
60
7V
6.5V
APT5010B2LL_LLL
25
6V
5.5V
30
80