APT10M11LVFRG Microsemi Power Products Group, APT10M11LVFRG Datasheet - Page 2

• Manufacturer Part Number: APT10M11LVFRG
• Description: MOSFET N-CH 100V 100A TO-264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M11LVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 450nC @ 10V
• Input Capacitance (ciss) @ Vds: 10300pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1
2
3
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum T
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
I
R
R
C
C
d
d
V
dv
C
Q
Q
RRM
I
Q
Q
(on)
(off)
t
SM
t
I
t
qJC
qJA
oss
SD
rss
iss
S
rr
gs
gd
/
r
f
g
rr
dt
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
D=0.5
[Cont.],
[Cont.],
[Cont.],
0.02
0.01
0.05
0.2
0.1
10
di
di
di
/
/
/
-4
dt
dt
dt
3
= 100A/µs)
= 100A/µs)
= 100A/µs)
SINGLE PULSE
dv
1
/
2
dt
(Body Diode)
(V
6
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
j
S
= -I
D
[Cont.])
I
I
D
D
10
4
5
6
Test Conditions
= I
= I
-2
V
V
Starting T
The maximum current is limited by lead temperature.
I
DD
DD
S
D
D
V
V
V
R
f = 1 MHz
V
£ -I
[Cont.] @ 25°C
[Cont.] @ 25°C
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
T
T
T
T
T
T
= 0.6W
D
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
[Cont.],
j
= +25°C, L = 500µH, R
DSS
DSS
10
di
-1
/
dt
= 100A/µs, V
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
1.0
R
G
t 1
APT10M11 B2VFR - LVFR
= 50V, T
= 25W, Peak I
t 2
8600
3200
1180
TYP
TYP
TYP
300
110
0.8
3.0
10
18
95
16
33
46
8
t 1
/ t 2
j
£ 150°C, R
10300
4480
1770
MAX
MAX
MAX
L
0.24
100
400
220
420
450
145
165
1.3
32
66
70
16
40
= 100A
5
10
G
= 2.0W
Amps
Amps
UNIT
UNIT
Volts
V/ns
UNIT
°C/W
nC
pF
µC
ns
ns