APT20M22B2VRG Microsemi Power Products Group, APT20M22B2VRG Datasheet - Page 3

• Manufacturer Part Number: APT20M22B2VRG
• Description: MOSFET N-CH 200V 100A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT20M22B2VRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 435nC @ 10V
• Input Capacitance (ciss) @ Vds: 10200pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
200
160
120
200
160
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
40
80
40
80
60
40
20
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
APT20M22B2VR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
@ <0.5 % DUTY CYCLE
-25
T
250 SEC. PULSE TEST
V
GS
J
V GS =7V, 8V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
20
50
C
= 10V
D
, CASE TEMPERATURE ( C)
T J = +125 C
T J = +25 C
[Cont.]
2
0
25
40
75
T J = +125 C
T J = +25 C
50
T J = -55 C
4
100
60
75
T J = -55 C
100 125 150
6
125
80
6.5V
5.5V
4.5V
4V
6V
5V
150
100
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
200
160
120
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
40
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
50
= 10V @ 0.5 I
NORMALIZED TO
, JUNCTION TEMPERATURE ( C)
T
, DRAIN CURRENT (AMPERES)
V GS =10V
C
1
, CASE TEMPERATURE ( C)
0
0
100
DS
25
25
(ON) vs DRAIN CURRENT
D
2
[Cont.]
V GS =15V
150
50
50
3
75
75 100 125 150
200
V GS =20V
100 125 150
8V
7V
10V
4
250
5.5V
6.5V
4.5V
4V
6V
5V
300
5