APT10050B2VRG Microsemi Power Products Group, APT10050B2VRG Datasheet - Page 3

• Manufacturer Part Number: APT10050B2VRG
• Description: MOSFET N-CH 1000V 21A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10050B2VRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 500nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
50
40
30
20
10
25
20
15
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
5
0
-50
25
V
0
0
V
APT10050B2VR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
-25
T
V
GS
J
V GS =5.5V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
100
T J = +125 C
50
C
= 10V
T J = +25 C
D
, CASE TEMPERATURE ( C)
[Cont.]
2
0
200
25
75
50
4
300
100
75
4.5V
T J = -55 C
100 125 150
5V
4V
6
400
125
150
500
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
0
V
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
, JUNCTION TEMPERATURE ( C)
= 10V @ 0.5 I
T
NORMALIZED TO
, DRAIN CURRENT (AMPERES)
V GS =10V
10
C
4
, CASE TEMPERATURE ( C)
0
0
V GS =5.5V, 10V & 15V
DS
25
25
20
(ON) vs DRAIN CURRENT
8
D
[Cont.]
50
50
12
30
75
75 100 125 150
V GS =20V
100 125 150
4.5V
16
40
5V
4V
20
50