APT6017LFLLG Microsemi Power Products Group, APT6017LFLLG Datasheet - Page 3

• Manufacturer Part Number: APT6017LFLLG
• Description: MOSFET N-CH 600V 35A TO-264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT6017LFLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Junction
temp. (°C)
160
140
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
40
35
30
25
20
15
10
0
5
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
(watts)
Power
V
FIGURE 4, TRANSFER CHARACTERISTICS
V
V DS > I D (ON) x R DS (ON)MAX.
I
GS
D
GS
= 17.5A
250µSEC. PULSE TEST
-25
@ <0.5 % DUTY CYCLE
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
= 10V
J
T
, JUNCTION TEMPERATURE (°C)
50
T J = +125°C
2
C
T J = +25°C
, CASE TEMPERATURE (°C)
0
25
75
RC MODEL
4
50
0.0230
0.108
0.111
100
6
75
T J = -55°C
100 125 150
125
8
0.0067F
0.00995F
0.187F
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50
0
0
V
V GS =15 &10V
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
GS
10
T
I
J
NORMALIZED TO
D
5
= 10V @ I
T
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
C
, CASE TEMPERATURE (°C)
20
V GS =10V
0
0
10
DS
D
30
25
25
(ON) vs DRAIN CURRENT
= 17.5A
15
40
50
50
7.5V
5.5V
6.5V
6V
7V
V GS =20V
50
75
75
20
APT6017 B2FLL_LFLL
8V
100 125 150
100 125 150
60
25
70
30
80