APT1201R6SVFRG Microsemi Power Products Group, APT1201R6SVFRG Datasheet

APT1201R6SVFRG

Manufacturer Part Number

APT1201R6SVFRG

Description

MOSFET N-CH 1200V 8A D3PAK

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT1201R6BVFRG.pdf (4 pages)

Specifications of APT1201R6SVFRG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.6 Ohm @ 4A, 10V

Drain To Source Voltage (vdss)

1200V (1.2kV)

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

230nC @ 10V

Input Capacitance (ciss) @ Vds

3660pF @ 25V

Power - Max

280W

Mounting Type

Surface Mount

Package / Case

D³Pak (2 leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

•

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

TO-247 or Surface Mount D

DS(on)

D(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

POWER MOS V

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

PAK Package

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25°C

• Avalanche Energy Rated

•

> I

= 25°C

FAST RECOVERY BODY DIODE

D(on)

, I

= ±30V, V

= 1200V, V

= 960V, V

x R

= 0V, I

= 1.0mA)

FREDFET

DS(on)

= 10V, I

= 250µA)

Max, V

= 0V)

= 0V, T

= 0V)

= 4A)

All Ratings: T

= 10V)

= 125°C)

APT1201R6BVFR

APT1201R6SVFR

1200V

= 25°C unless otherwise specified.

APT1201R6BVFR_SVFR

1200

MIN

BVFR

-55 to 150

TO-247

1200

1210

2.24

TYP

±30

±40

280

300

8A 1.600

1.600

±100

1000

MAX

250

PAK

SVFR

Amps

Watts

Amps

Ohms

UNIT

W/°C

UNIT

Volts

µA

°C

Ω Ω Ω Ω Ω

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APT1201R6SVFRG Summary of contents

Page 1

POWER MOS V Power MOS V ® new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t (on) Turn-on Delay Time d t ...

Page 3

V GS =5.5V, 6V, 7V, 10V &15V 100 200 300 400 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS -55° +25° ...

Page 4

OPERATION HERE LIMITED (ON 0 =+25° =+150°C SINGLE PULSE 0 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 I ...

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