APT20M20B2LLG Microsemi Power Products Group, APT20M20B2LLG Datasheet
APT20M20B2LLG
Specifications of APT20M20B2LLG
Related parts for APT20M20B2LLG
APT20M20B2LLG Summary of contents
Page 1
POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
Page 2
DYNAMIC CHARACTERISTICS Characteristic Symbol C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...
Page 3
Typical Performance Curves RC MODEL Junction temp. ( ”C) 0.0844 Power (Watts) 0.138 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 200 V DS > (ON DS(ON) MAX. 180 250 µSEC. PULSE TEST @ <0.5 % ...
Page 4
OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 75A D V ...
Page 5
Typical Performance Curves 10% t d(on 90 10% Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT100S20B D.U.T. Figure 20, Inductive Switching Test Circuit T-MAX (B2) Package Outline ...