APT8018L2VFRG Microsemi Power Products Group, APT8018L2VFRG Datasheet

APT8018L2VFRG

Manufacturer Part Number

APT8018L2VFRG

Description

MOSFET N-CH 800V 43A TO-264MAX

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT8018L2VFRG.pdf (4 pages)

Specifications of APT8018L2VFRG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

180 mOhm @ 21.5A, 10V

Drain To Source Voltage (vdss)

800V

Current - Continuous Drain (id) @ 25° C

43A

Vgs(th) (max) @ Id

4V @ 5mA

Gate Charge (qg) @ Vgs

610nC @ 10V

Input Capacitance (ciss) @ Vds

10700pF @ 25V

Power - Max

833W

Mounting Type

Through Hole

Package / Case

TO-264

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• TO-264

• Faster Switching

• Lower Leakage

STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Symbol

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

POWER MOS V

MAX

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

Package

is a new generation of high voltage N-Channel enhancement

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25°C

• Avalanche Energy Rated

•

= 25°C

FAST RECOVERY BODY DIODE

, I

= ±30V, V

= 640V, V

= 800V, V

= 5mA)

= 0V, I

FREDFET

= 10V, I

= 250µA)

= 0V)

= 0V, T

= 0V)

= 21.5A)

All Ratings: T

= 125°C)

800V 43A

= 25°C unless otherwise specified.

MIN

800

APT8018L2VFR

-55 to 150

3200

L2VFR

6.67

TYP

±30

±40

800

172

833

300

0.180

1000

±100

TO-264

MAX

250

Max

0.180

Ohms

Amps

Watts

UNIT

W/°C

UNIT

Volts

µA

°C

Ω Ω Ω Ω Ω

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APT8018L2VFRG Summary of contents

Page 1

POWER MOS V Power MOS new generation of high voltage N-Channel enhancement ® mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

RC MODEL Junction temp. (°C) 0.0545 Power (watts) 0.0957 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 V DS > (ON (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 80 ...

Page 4

OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 43A D ...

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