IRLL2703TRPBF International Rectifier, IRLL2703TRPBF Datasheet

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IRLL2703TRPBF

Manufacturer Part Number
IRLL2703TRPBF
Description
MOSFET N-CH 30V 3.9A SOT223
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLL2703TRPBF

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
14nC @ 5V
Vgs(th) (max) @ Id
2.4V @ 250µA
Current - Continuous Drain (id) @ 25° C
3.9A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 3.9A, 10V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
70 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
5.5 A
Power Dissipation
2.1 W
Mounting Style
SMD/SMT
Gate Charge Qg
9.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLL2703TRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IRLL2703TRPBF
Quantity:
9 000
Company:
Part Number:
IRLL2703TRPBF
Quantity:
20 000
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
I
I
I
I
P
P
V
E
I
E
dv/dt
T
R
R
D
D
D
DM
AR
J,
D
D
GS
AS
AR
@ T
@ T
@ T
JA
JA
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
@T
@T
T
STG
A
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Parameter
Parameter
GS
GS
GS
@ 10V**
@ 10V*
@ 10V*
G
Typ.
90
50
HEXFET
-55 to + 150
D
S
S O T -2 2 3
Max.
± 16
180
5.5
3.9
3.1
2.1
1.0
8.3
5.0
3.9
0.1
16
IRLL2703
®
R
Max.
DS(on)
Power MOSFET
120
60
V
I
DSS
D
= 3.9A
= 0.045
= 30V
PD - 91894
Units
mW/°C
Units
°C/W
V/ns
mJ
mJ
°C
W
W
A
V
A
1
6/15/99

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IRLL2703TRPBF Summary of contents

Page 1

... Fast Switching Fully Avalanche Rated l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRLL2703 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 10 3.5V BOTTOM 2.7V 1 0.1 2.7V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ...

Page 4

IRLL2703 1000 1MHz iss rss 800 oss iss 600 C oss 400 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

IRLL2703 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G 5.0 V ...

Page 7

Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 TIO ...

Page 8

IRLL2703 Tape & Reel Information SOT-223 Outline (. (. (.4 7 ...

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