IRLL2703TRPBF International Rectifier, IRLL2703TRPBF Datasheet
IRLL2703TRPBF
Specifications of IRLL2703TRPBF
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IRLL2703TRPBF Summary of contents
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... Fast Switching Fully Avalanche Rated l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRLL2703 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 10 3.5V BOTTOM 2.7V 1 0.1 2.7V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ...
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IRLL2703 1000 1MHz iss rss 800 oss iss 600 C oss 400 C rss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...
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IRLL2703 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G 5.0 V ...
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Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 TIO ...
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IRLL2703 Tape & Reel Information SOT-223 Outline (. (. (.4 7 ...