IRLL2703TRPBF International Rectifier, IRLL2703TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLL2703TRPBF
• Description: MOSFET N-CH 30V 3.9A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLL2703TRPBF

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 70 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 2.1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
‚
Notes:
IRLL2703
I
I
V
t
Q
t
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
S
SM
rr
on
DSS
GSS
d(on)
r
d(off)
f
V
SD
fs
2
rr
(BR)DSS
DS(on)
GS(th)
Repetitive rating; pulse width limited by
gs
gd
iss
oss
rss
Starting T
g
max. junction temperature. ( See fig. 11 )
R
(BR)DSS
G
= 25 , I
/ T
J
J
= 25°C, L = 24 mH
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
= 3.9A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
Pulse width
I
T
SD
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
5.9
–––
–––
–––
–––
Min. Typ. Max. Units
30
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
150°C
2.3A, di/dt
–––
0.06 –––
–––
–––
–––
––– 0.045
––– 0.060
––– 0.070
–––
–––
–––
–––
–––
230
––– -100
530
42
62
9.3
2.3
5.1
7.4
6.9
24
14
95
300µs; duty cycle
–––
100
–––
–––
16
1.0
–––
250
–––
–––
–––
–––
–––
3.9
63
94
2.4
3.4
7.6
25
14
150A/µs, V
V/°C
nC
ns
µA
nA
nC
pF
ns
V
A
V
V
S
MOSFET symbol
showing the
p-n junction diode.
T
T
integral reverse
di/dt = 100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
I
R
R
V
V
V
V
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
DD
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
= 2.3A
= 2.3A
= 6.5
= 6.2
= 0V, I
= 10V, I
= V
= 25V, I
= 30V, V
= 24V, V
= 16V
= -16V
= 24V
= 15V
= 0V
= 25V
= 5.0V, I
= 4.0V, I
= 5.0V, See Fig. 6 and 9 „
V
2%.
(BR)DSS
GS
, I
D
S
F
D
See Fig. 10 „
D
D
Conditions
= 250µA
D
D
= 2.3A
GS
GS
= 2.3A, V
Conditions
= 250µA
= 2.3 A
,
= 3.9A „
= 3.1A „
= 2.0A „
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 125°C
= 0V „
S
+L
D
)