IRLL2703TRPBF International Rectifier, IRLL2703TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRLL2703TRPBF
• Description: MOSFET N-CH 30V 3.9A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLL2703TRPBF

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 70 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 2.1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4.0
3.0
2.0
1.0
0.0
1000
Fig 9. Maximum Drain Current Vs.
100
0.1
10
25
0.0001
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.001
SINGLE PULSE
75
100
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
1
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
5.0V
V
GS
t
r
10
V
J
DS
µs
DM
x Z
1
IRLL2703
thJA
D.U.T.
P
2
DM
t
d(off)
+ T
100
R
A
D
t
1
t
f
t
2
+
-
V
1000
5
DD