IRF7324D1PBF International Rectifier, IRF7324D1PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7324D1PBF
• Description: MOSFET P-CH 20V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7324D1PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7324D1PbF
4
Fig 7. Typical On-Resistance Vs. Gate
0.4
0.3
0.2
0.1
0.0
1.5
1.0
0.5
2.0
-60 -40 -20
I D = -2.2A
V GS = -4.5V
-V GS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
4.0
0
Voltage
20
6.0
40
60
Power Mosfet Characteristics
80 100 120 140 160
8.0
I D = -2.2A
T J = 25°C
10.0
0.164
0.160
0.156
0.152
0.148
0.144
0.140
Fig 8. Maximum Safe Operating Area
100
10
0.0
1
Fig 6. Typical On-Resistance Vs.
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.5
-V DS , Drain-toSource Voltage (V)
-I D , Drain Current (A)
Drain Current
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V GS= - 4.5V
1.5
10
V GS= - 5.0V
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2.0
10msec
1msec
100µsec
2.5
100
3.0