IRF7324 International Rectifier, IRF7324 Datasheet

MOSFET 2P-CH 20V 9A 8-SOIC

IRF7324

Manufacturer Part Number
IRF7324
Description
MOSFET 2P-CH 20V 9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7324

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 5V
Input Capacitance (ciss) @ Vds
2940pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7324

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7324
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7324D1TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7324D1TRPBF
Manufacturer:
International Rectifier
Quantity:
25 612
Part Number:
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Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7324TR(BLACK)
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7324TRPBF
Manufacturer:
International Rectifier
Quantity:
30 807
Part Number:
IRF7324TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7324TRPBF
Quantity:
15 989
Description
Absolute Maximum Ratings
Thermal Resistance
New trench HEXFET
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
Trench Technology
Ultra Low On-Resistance
Available in Tape & Reel
2.5V Rated
Low Profile (<1.1mm)
J
DS
D
D
GS
Dual P-Channel MOSFET
@ T
@ T
JA
, T
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Linear Derating Factor
®
Gate-to-Source Voltage
Power MOSFETs from International
Parameter
GS
GS
@ -4.5V
@ -4.5V
Max.
G 2
G 1
S2
S 1
1
2
3
4
T o p V ie w
HEXFET
8
7
6
5
-55 to + 150
62.5
D 1
D 1
D 2
D 2
Max.
-9.0
-7.1
Units
-20
-71
2.0
1.3
± 12
SO-8
16
®
R
IRF7324
Power MOSFET
DS(on)
V
DSS
PD -93799A
= 0.018
= -20V
mW/°C
Units
°C/W
°C
W
W
V
A
V
1
6/26/00

Related parts for IRF7324

IRF7324 Summary of contents

Page 1

... Junction and Storage Temperature Range J STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET -4. -4. 150 Max. 62.5 PD -93799A IRF7324 ® Power MOSFET V = -20V DSS 0.018 D 2 DS(on) SO-8 Max. Units -20 V -9.0 -7.1 A -71 2 mW/°C ± °C Units °C/W ...

Page 2

... IRF7324 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -15V 0.0 3.0 3.5 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7324 VGS -4.5V -3.5V -2.5V -2.0V -1.5V -1.3V -1.0V -0.75V -0.75V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS -9.0A ...

Page 4

... IRF7324 5000 1MHz iss rss 4000 oss iss 3000 2000 1000 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 150 ° 0.1 0.2 0.4 0.6 0.8 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7324 D.U. µ d(on) r d(off) ...

Page 6

... IRF7324 0.025 0.020 -9.0A 0.015 0.010 2.0 2.5 3.0 3.5 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.10 0.08 0.06 0. -2.5V 0.02 0.00 4.0 4 Fig 13. Typical On-Resistance Vs. Current Regulator Same Type as D.U.T. ...

Page 7

... SO-8 Package Details (. (. ( (. Part Marking www.irf.com ° (. IRF7324 ILLIM .05 32 .06 88 1 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3. .635 .22 84 .244 0 5.8 0 6.20 K .01 1 .01 9 ...

Page 8

... IRF7324 Tape and Reel ( & & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl ...

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