IRF9321PBF International Rectifier, IRF9321PBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRF9321PBF
Manufacturer Part Number
IRF9321PBF
Description
MOSFET P-CH 30V 15A SO-8
Manufacturer
International Rectifier
Specifications of IRF9321PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.2 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.4V @ 50µA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
2590pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
5.9mohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
11.2 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 15 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
34 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
•
Notes through
www.irf.com
Orderable part number
IRF9321PbF
IRF9321TRPbF
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
V
V
I
I
I
P
P
T
T
Absolute Maximum Ratings
D
D
DM
DS
GS
D
D
J
STG
@ T
@ T
@T
@T
(@V
(@V
(@T
A
A
A
A
R
R
Q
= 25°C
= 70°C
= 25°C
= 70°C
DS(on) max
DS(on) max
GS
g (typical)
GS
A
V
I
= 25°C)
DS
= -4.5V)
D
= -10V)
are on page 2
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
11.2
-30
-15
7.2
34
Package Type
SO8
SO8
f
f
mΩ
mΩ
nC
Parameter
V
A
GS
GS
@ -10V
@ -10V
Tape and Reel
Tube/Bulk
Form
*
6
6
6
Standard Pack
results in
⇒
Quantity
4000
-55 to + 150
'
'
'
'
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
HEXFET
95
Max.
IRF9321PbF
-120
0.02
-30
±20
-15
-12
2.5
1.6
®
Power MOSFET
SO-8
Note
05/11/2010
Units
W/°C
°C
W
V
A
1
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IRF9321PBF Summary of contents
... mΩ mΩ results in Standard Pack Form SO8 Tube/Bulk SO8 Tape and Reel Parameter @ -10V GS @ -10V IRF9321PbF ® HEXFET Power MOSFET ' ' ' ' SO-8 Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier ⇒ Note Quantity 95 4000 Max. Units -30 V ±20 -15 -12 A -120 2 ...
Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R DS(on) Static Drain-to-Source On-Resistance V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...
PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° -10V ≤60µs ...
150° 25°C 10 1.0 0.3 0.5 0.7 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 ...
125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 1400 1200 ...
DUT 20K S Fig 17a. Gate Charge Test Circuit D.U DRIVER -V -20V GS 0.01 Ω Fig 18a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig ...
SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à ...
... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. ...
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