IRF9321PBF International Rectifier, IRF9321PBF Datasheet - Page 5

• Manufacturer Part Number: IRF9321PBF
• Description: MOSFET P-CH 30V 15A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9321PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 2590pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 5.9mohm
• Rds(on) Test Voltage Vgs: -10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 11.2 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 15 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14. Maximum Avalanche Energy vs. Drain Current

1400
1200
1000
‚
800
600
400
200
+
Fig 12. On-Resistance vs. Gate Voltage
-
20
18
16
14
12
10
0
8
6
4
2
0
25
2
D.U.T
Starting T J , Junction Temperature (°C)
4
-V GS, Gate -to -Source Voltage (V)
Fig 16.
*
50
6
ƒ
+
-
•
•
•
•
SD
8
75
10
•
•
•
T J = 125°C
T J = 25°C
12
100
TOP
BOTTOM -12A
-
G
„
14
I D = -15A
125
16
+
I D
-1.4A
-2.2A
18
150
+
-
20
Re-Applied
Voltage
Reverse
Recovery
Current
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
1000
800
600
400
200
P.W.
SD
60
50
40
30
20
10
DS
0
0
Waveform
1E-5
Waveform
Fig 15. Typical Power vs. Time
0
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
20
1E-4
Diode Recovery
Current
-I D , Drain Current (A)
dv/dt
Forward Drop
40
di/dt
1E-3
®
Time (sec)
Power MOSFETs
60
D =
1E-2
Period
P.W.
Vgs = -4.5V
80
Vgs = -10V
1E-1
V
V
I
SD
GS
DD
100
=10V
1E+0
120
5