IRF9321PBF International Rectifier, IRF9321PBF Datasheet - Page 4

• Manufacturer Part Number: IRF9321PBF
• Description: MOSFET P-CH 30V 15A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9321PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 2590pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 5.9mohm
• Rds(on) Test Voltage Vgs: -10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 11.2 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 15 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
1.0
10
15
10
5
0
0.001
Fig 9. Maximum Drain Current vs.
0.01
0.3
100
25
0.1
10
1E-006
1
-V SD , Source-to-Drain Voltage (V)
Ambient Temperature
T J = 150°C
0.5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T A , Ambient Temperature (°C)
50
D = 0.50
0.10
0.02
0.20
0.05
0.01
1E-005
0.7
75
T J = 25°C
0.0001
0.9
100
SINGLE PULSE
( THERMAL RESPONSE )
V GS = 0V
1.1
125
0.001
t 1 , Rectangular Pulse Duration (sec)
1.3
150
0.01
1000
0.1
Fig 10. Threshold Voltage vs. Temperature
100
0.1
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
Fig 8. Maximum Safe Operating Area
1
0.01
-75 -50 -25
T A = 25°C
Tj = 150°C
Single Pulse
-V DS , Drain-to-Source Voltage (V)
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
I D = -50µA
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
DC
0
10
10msec
25
1
50
100
75 100 125 150
1msec
10
100µsec
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1000
100