IRF7469PBF International Rectifier, IRF7469PBF Datasheet

MOSFET N-CH 40V 9A 8-SOIC

IRF7469PBF

Manufacturer Part Number
IRF7469PBF
Description
MOSFET N-CH 40V 9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRF7469PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
2000pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.017Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Drain Current (max)
9A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
21 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
9 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
3.5 ns
Gate Charge Qg
15 nC
Minimum Operating Temperature
- 55 C
Rise Time
2.2 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7469PBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
Benefits
Absolute Maximum Ratings
Thermal Resistance
Applications
Notes  through
Symbol
V
V
I
I
I
P
P
T
Symbol
R
R
www.irf.com
D
D
DM
J
DS
GS
D
D
θJL
θJA
and Current
@ T
@ T
, T
for Telecom and Industrial Use
Converters with Synchronous Rectification
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
High Frequency Isolated DC-DC
High Frequency Buck Converters for
Lead-Free
@T
@T
Computer Processor Power
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Junction-to-Drain Lead
Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Linear Derating Factor
Gate-to-Source Voltage
are on page 8
Parameter
Parameter

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
G
S
S
S
V
40V
DSS
1
2
3
4
Top View
Typ.
–––
–––
HEXFET
R
8
7
6
5
DS(on)
17@V
-55 to + 150
D
D
D
D
A
A
Max.
± 20
0.02
9.0
7.3
2.5
1.6
40
73
GS
IRF7469PbF
max(mW)
®
= 10V
Power MOSFET
Max.
20
50
SO-8
9.0A
mW/°C
Units
Units
°C/W
I
D
°C
W
W
V
A
V
1

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IRF7469PBF Summary of contents

Page 1

... Notes  through „ are on page 8 www.irf.com SMPS MOSFET V DSS 40V Top View @ 10V GS @ 10V GS  ƒ ƒ Typ. ––– „ ––– IRF7469PbF ® HEXFET Power MOSFET R max(mW) I DS(on) D 17@V = 10V 9. SO-8 Max. Units 40 V ± ...

Page 2

... IRF7469PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP BOTTOM ° 10 0.1 100 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 = 25V 0.0 4.5 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7469PbF VGS 10V 8.0V 7.0V 5.0V 4.5V 4.0V 3.7V 3.5V 3.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 9.0A ...

Page 4

... IRF7469PbF 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 150 ° 0.1 0.4 0.8 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 7.2A D SHORTED 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7469PbF + - ≤ 1 ≤ 0 d(off thJA A ...

Page 6

... IRF7469PbF 0. 4.5V 0. 10V 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 14a&b. Unclamped Inductive Test circuit ...

Page 7

... L 7 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL LAS T DIGIT YEAR WW = WEEK XXXX EMBLY CODE F7101 LOT CODE PART NUMBER IRF7469PbF INCHE S MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 ...

Page 8

... IRF7469PbF SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 8.1mH ...

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