IRFR2405TRPBF International Rectifier, IRFR2405TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR2405TRPBF
• Description: MOSFET N-CH 55V 56A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFR2405TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2430pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 56A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.016Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 56A
• Power Dissipation: 110W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR2405PBFTR; IRFR2405TRPBF; IRFR2405TRPBFTR

4
1000
4000
3200
2400
1600
100
800
10
1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.4
1
T = 175 C
Drain-to-Source Voltage
J
V
V
SD
DS
0.8
Forward Voltage
°
V
C
C
C
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
=
=
=
=
J
1.2
0V,
C
C
C
gs
gd
ds
C iss
C rss
+ C
+ C
C oss
°
10
f = 1MHz
gd ,
gd
1.6
C
ds
V
SHORTED
2.0
GS
= 0 V
2.4
100
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
34A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
20
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
40
BY R
V
V
V
10
DS(on)
DS
DS
DS
= 44V
= 27V
= 11V
FOR TEST CIRCUIT
60
SEE FIGURE
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80
10us
100us
1ms
10ms
13
100
100