IRFR2405TRPBF International Rectifier, IRFR2405TRPBF Datasheet - Page 6

MOSFET N-CH 55V 56A DPAK

IRFR2405TRPBF

Manufacturer Part Number
IRFR2405TRPBF
Description
MOSFET N-CH 55V 56A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRFR2405TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
56A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2430pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.016Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
56A
Power Dissipation
110W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR2405PBFTR
IRFR2405TRPBF
IRFR2405TRPBFTR

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Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V DS
Q
GS
t p
t p
I AS
D.U.T
Q
Charge
Q
0.01 Ω
L
GD
G
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
240
200
160
120
80
40
0
25
Fig 13b. Gate Charge Test Circuit
Fig 12c. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
12V
50
V
GS
Same Type as D.U.T.
Current Regulator
Vs. Drain Current
.2µF
J
75
50KΩ
3mA
Current Sampling Resistors
.3µF
100
I
G
D.U.T.
125
TOP
BOTTOM
www.irf.com
I
D
+
-
V
150
DS
°
I D
14A
24A
34A
175

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