IRF7704TRPBF International Rectifier, IRF7704TRPBF Datasheet

IRF7704TRPBF

Manufacturer Part Number

IRF7704TRPBF

Description

MOSFET P-CH 40V 4.6A 8-TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7704TRPBF.pdf (8 pages)

Specifications of IRF7704TRPBF

Package / Case

8-TSSOP

Mounting Type

Surface Mount

Power - Max

1.5W

Fet Type

MOSFET P-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

38nC @ 4.5V

Vgs(th) (max) @ Id

3V @ 250µA

Current - Continuous Drain (id) @ 25° C

4.6A

Drain To Source Voltage (vdss)

40V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

46 mOhm @ 4.6A, 10V

Transistor Polarity

P Channel

Continuous Drain Current Id

4.6A

Drain Source Voltage Vds

40V

On Resistance Rds(on)

46mohm

Rds(on) Test Voltage Vgs

-10V

Threshold Voltage Vgs Typ

-3V

Rohs Compliant

Yes

Resistance Drain-source Rds (on)

74 mOhms

Drain-source Breakdown Voltage

- 40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 4.6 A

Power Dissipation

1.5 W

Mounting Style

SMD/SMT

Gate Charge Qg

25 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

with an extremely efficient and reliable device for

battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

Description

www.irf.com

@ T

P-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.1mm)

Available in Tape & Reel

STG

= 70°C

= 25°C

= 70°C

Power MOSFETs from International Rectifier

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Parameter

provides thedesigner

@ -10V

1 = D

2 = S

3 = S

4 = G

-40V

DSS

HEXFET

8 = D

7 = S

5 = D

6 = S

DS(on)

-55 to + 150

74@V

46@V

Max.

-4.6

-3.7

± 20

-40

-19

1.5

1.0

max (m

= -4.5V

IRF7704

= -10V

Power MOSFET

TSSOP-8

PD- 94160

-4.6A

-3.7A

mW/°C

Units

°C/W

°C

3/19/01

Related parts for IRF7704TRPBF

IRF7704TRPBF Summary of contents

Page 1

... Low Profile (< 1.1mm) Available in Tape & Reel Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

Page 2

IRF7704 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7704TRPBF International Rectifier, IRF7704TRPBF Datasheet

IRF7704TRPBF

Specifications of IRF7704TRPBF

Related parts for IRF7704TRPBF

IRF7704TRPBF Summary of contents

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