IRF7862PBF International Rectifier, IRF7862PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7862PBF
• Description: MOSFET N-CH 30V 21A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7862PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4090pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 21 A
• Gate Charge, Total: 30 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 3.7 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 18 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 87 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5.4V
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 4.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 30 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7862PbF
100000
10000
4
1000
1000
100
100
1.0
10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
T J = 150°C
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
Forward Voltage
C iss
C oss
C rss
0.6
f = 1 MHZ
10
0.8
T J = 25°C
V GS = 0V
1.0
100
1.2
1000
100
0.1
5.0
4.0
3.0
2.0
1.0
0.0
10
1
Fig 8. Maximum Safe Operating Area
0.1
0
Fig 6. Typical Gate Charge Vs.
I D = 16A
T A = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
5
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
1.0
V DS = 24V
V DS = 15V
1msec
15
20
100µsec
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25
30
100
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