IRF7862PBF International Rectifier, IRF7862PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7862PBF
• Description: MOSFET N-CH 30V 21A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7862PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4090pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 21 A
• Gate Charge, Total: 30 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 3.7 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 18 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 87 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5.4V
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 4.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 30 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.0001
0.001
0.01
100
25
20
15
10
0.1
10
5
0
1E-006
1
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
T A , Ambient Temperature (°C)
Ambient Temperature
50
0.10
0.05
0.02
0.20
0.01
1E-005
τ
J
τ
J
τ
75
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
R
1
R
0.0001
100
1
τ
2
SINGLE PULSE
( THERMAL RESPONSE )
τ
R
2
2
R
2
125
t 1 , Rectangular Pulse Duration (sec)
R
τ
3
3
R
0.001
τ
3
3
150
τ
R
4
τ
4
R
4
4
τ
A
τ
A
Ri (°C/W) τi (sec)
0.01
1.242
4.759
28.506
15.507
Fig 10. Threshold Voltage vs. Temperature
2.5
2.3
2.0
1.8
1.5
1.3
1.0
-75 -50 -25
44.5
1.2211
0.000172
0.031397
0.1
I D = 250µA
T J , Temperature ( °C )
0
IRF7862PbF
1. Duty factor D = t / t
2. Peak T = P
Notes:
25
1
J
50
DM
x Z
75 100 125 150
1
thJA
P
2
10
DM
+ T
A
t
1
t
2
5
100