IRF7805PBF International Rectifier, IRF7805PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7805PBF
• Description: MOSFET N-CH 30V 13A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7805PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -

IRF7805PbF
Notes:

‚
ƒ
„
…
†
2
BV
R
V
I
I
Q
Q
Q
R
t
t
t
t
I
I
V
Q
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
DS(on)
GS(th)
G
SD
g
sw
oss
rr
rr(s)
Q
Q
Q
DSS
gs1
gs2
gd
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
R
Devices are 100% tested to these parameters.
θ
is measured at T
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Charge
(with Parallel Schottky)
J
= 25°C (unless otherwise specified)
Parameter
J
oss
of approximately 90°C.
Ù
Parameter
gs2
+ Q
f
gd
)
f
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
0.5
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.2
3.7
1.4
6.8
8.2
3.0
22
16
20
38
16
88
55
-100
11.5
–––
150
100
–––
–––
–––
–––
–––
–––
–––
106
–––
–––
3.0
3.6
1.7
2.5
1.2
11
70
10
31
mΩ
µA
nA
nC
nC
nC
nC
ns
Ω
V
V
A
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
R
Resistive Load
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
di/dt = 700A/µs
V
di/dt = 700A/µs (with 10BQ040)
V
D
D
J
GS
GS
DS
DS
DS
DS
GS
GS
GS
DS
DS
DD
DS
DS
G
= 7.0A
= 7.0A
= 2Ω
= 25°C, I
= 0V, I
= 4.5V, I
= V
= 30V, V
= 24V, V
= 24V, V
= 12V
= -12V
= 5.0V
= 16V
= 16V, V
= 16V, V
= 16V, V
= 16V, V
GS
, I
D
Conditions
Conditions
D
S
= 250µA
D
GS
GS
GS
GS
GS
= 250µA
GS
GS
= 7.0A, V
= 7.0A
= 0V
= 0V
= 0V, T
= 0V
= 4.5V
= 0V, I
= 0V, I
www.irf.com
d
e
GS
J
S
S
= 100°C
= 7.0A
= 7.0A
= 0V