IRF7805PBF International Rectifier, IRF7805PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7805PBF
• Description: MOSFET N-CH 30V 13A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7805PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -

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Fig 1. Normalized On-Resistance vs. Temperature
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
100
0.1
10
1
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(THERMAL RESPONSE)
0.01
SINGLE PULSE
0.1
t , Rectangular Pulse Duration (sec)
1
Typical Characteristics
1
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Typical Source-Drain Diode Forward Voltage
0.1
10
1
0.4
1. Duty factor D = t / t
2. Peak T = P
Notes:
T = 150 C
10
J
V
SD
0.5
J
°
,Source-to-Drain Voltage (V)
DM
IRF7805PbF
x Z
1
0.6
thJA
P
2
100
DM
+ T
A
t
1
0.7
t
2
T = 25 C
J
V
1000
0.8
GS
°
= 0 V
3
0.9