IRF7458PBF International Rectifier, IRF7458PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7458PBF
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7458PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14A, 16V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 14 A
• Gate Charge, Total: 39 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 6.3 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 22 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 26 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 0.82 V
• Voltage, Gate To Source: ±30 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 14A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7458PbF
Avalanche Characteristics
Diode Characteristics
Dynamic @ T
Static @ T
Symbol
E
I
V
∆V
R
V
V
I
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
Symbol
I
I
t
Q
t
Q
I
AR
DSS
d(on)
d(off)
S
SM
r
f
rr
rr
GSS
fs
AS
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
2
g
gs
gd
oss
rr
rr
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Diode Forward Voltage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
Min. Typ. Max. Units
30
26
–––
–––
––– 0.82
––– 0.68 –––
–––
–––
–––
–––
0.029
2410 –––
1100 –––
–––
–––
–––
–––
–––
––– -200
–––
110
–––
–––
6.3
7.0
8.7
4.6
5.0
39
11
29
10
22
51
87
52
93
–––
100
200
–––
–––
–––
–––
–––
–––
130
140
8.0
9.0
4.0
1.3
–––
20
59
17
13
44
2.3
110
77
78
mΩ
µA
nA
V/°C
nC
ns
nC
nC
pF
ns
ns
V
V
S
V
Typ.
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
D
D
Reference to 25°C, I
GS
GS
GS
DS
DS
DS
GS
GS
J
J
J
J
DS
DS
GS
GS
DD
GS
GS
DS
G
= 11A
= 11A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8Ω
= V
= 24V, V
= 24V, V
= 0V, I
= 16V, I
= 10V, I
= 24V
= -24V
= 15V, I
= 15V
= 15V
= 10V ƒ
= 0V, V
= 15V
= 10V ƒ
= 0V
GS
, I
D
S
F
D
DS
D
D
D
Conditions
= 250µA
GS
GS
S
F
Conditions
Conditions
= 11A, V
= 11A, V
= 250µA
= 14A
= 11A
= 11A
= 11A, V
= 11A, V
= 16V
Max.
= 0V, T
280
= 0V
11
www.irf.com
D
GS
R
ƒ
ƒ
= 1mA
= 20V
J
GS
R
=20V
= 125°C
= 0V ƒ
G
= 0V
Units
mJ
A
D
S