IRF7458PBF International Rectifier, IRF7458PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7458PBF
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7458PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14A, 16V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 14 A
• Gate Charge, Total: 39 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 6.3 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 22 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 26 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 0.82 V
• Voltage, Gate To Source: ±30 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 14A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7458PbF
I
AS
12V
Fig 14a&b. Unclamped Inductive Test circuit
6
V
Fig 13a&b. Basic Gate Charge Test Circuit
GS
0.020
0.016
0.012
0.008
0.004
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
50KΩ
3mA
t p
Current Sampling Resistors
0
.3µF
I
G
V GS = 6.0V
V GS = 16V
V
(BR)DSS
D.U.T.
20
I
D
and Waveforms
and Waveform
+
-
I D , Drain Current (A)
V
DS
40
V
R G
GS
20V
V DS
60
t p
V
G
Q
I AS
GS
D.U.T
V GS = 10V
0.01 Ω
L
80
Charge
Q
Q
GD
G
100
15V
DRIVER
120
+
-
V DD
A
0.016
0.014
0.012
0.010
0.008
0.006
Fig 13. On-Resistance Vs. Gate Voltage
800
600
400
200
0
Fig 14c. Maximum Avalanche Energy
25
4
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
6
50
Vs. Drain Current
J
8
75
10
I D = 14A
100
www.irf.com
12
TOP
BOTTOM
125
14
°
5.0A
9.0A
I D
11A
16
150