IRFZ48VPBF International Rectifier, IRFZ48VPBF Datasheet
IRFZ48VPBF
Manufacturer Part Number
IRFZ48VPBF
Description
MOSFET N-CH 60V 72A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFZ48VPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
1985pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
72 A
Gate Charge, Total
110 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
12 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
157 ns
Time, Turn-on Delay
7.6 ns
Transconductance, Forward
35 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
2 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
72 A
Mounting Style
Through Hole
Gate Charge Qg
73.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ48VPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFZ48VPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFZ48VPBF
Manufacturer:
IR
Quantity:
561
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
l
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Lead-Free
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter
ƒ
GS
GS
@ 10V
@ 10V
‚
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
IRFZ48VPbF
-55 to + 175
S
D
TO-220AB
Max.
290
150
± 20
166
1.0
5.3
72
51
72
15
®
R
Power MOSFET
DS(on)
Max.
V
–––
1.0
62
DSS
I
D
= 72A
= 60V
= 12mΩ
PD - 94992
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
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IRFZ48VPBF Summary of contents
Page 1
... Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θ 10V GS @ 10V GS ‚ ƒ 300 (1.6mm from case ) Typ. 0. 94992 IRFZ48VPbF ® HEXFET Power MOSFET 60V DSS R = 12mΩ DS(on 72A D S TO-220AB Max. Units 290 150 W 1.0 W/° ...
Page 2
... IRFZ48VPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
Page 3
... IRFZ48VPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPL HIS 1010 ...