IRFZ48VPBF International Rectifier, IRFZ48VPBF Datasheet

MOSFET N-CH 60V 72A TO-220AB

IRFZ48VPBF

Manufacturer Part Number
IRFZ48VPBF
Description
MOSFET N-CH 60V 72A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFZ48VPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
1985pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
72 A
Gate Charge, Total
110 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
12 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
157 ns
Time, Turn-on Delay
7.6 ns
Transconductance, Forward
35 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
2 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
72 A
Mounting Style
Through Hole
Gate Charge Qg
73.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ48VPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ48VPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFZ48VPBF
Manufacturer:
IR
Quantity:
561
Company:
Part Number:
IRFZ48VPBF
Quantity:
600
www.irf.com
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
l
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Lead-Free
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
IRFZ48VPbF
-55 to + 175
S
D
TO-220AB
Max.
290
150
± 20
166
1.0
5.3
72
51
72
15
®
R
Power MOSFET
DS(on)
Max.
V
–––
1.0
62
DSS
I
D
= 72A
PD - 94992A
= 60V
= 12mΩ
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

Related parts for IRFZ48VPBF

IRFZ48VPBF Summary of contents

Page 1

... R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS  ‚   ƒ 300 (1.6mm from case ) Typ. 0. 94992A IRFZ48VPbF ® HEXFET Power MOSFET 60V DSS R = 12mΩ DS(on 72A D S TO-220AB Max. Units 290 150 W 1.0 W/° ...

Page 2

... IRFZ48VPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... GS www.irf.com 1000 TOP BOTTOM 100 10 ° 1 100 0.1 3 2.5 ° 2.0 1.5 1.0 0.5 = 25V 0.0 -60 -40 - IRFZ48VPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 72A V = 10V 100 120 140 160 180 ° ...

Page 4

... IRFZ48VPbF 4000 0V SHORTED C rss = oss = 3000 Ciss 2000 1000 Coss Crss Drain-to-Source Voltage (V) 1000 ° 175 C J 100 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage ( MHZ 100 1000 100 ° Single Pulse 1.4 1.8 72A V = 48V 30V 12V 100 Q , Total Gate Charge (nC) ...

Page 5

... T , Case Temperature ( 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 www.irf.com 90% 90% 150 175 ° 10% 10 d(on) d(on) Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFZ48VPbF + - ≤ 1 ≤ 1 ≤ 0.1 % ≤ 0 d(off) d(off thJC C 0 ...

Page 6

... IRFZ48VPbF D.U 20V 0.01 Ω Charge 6 400 15V DRIVER 300 + - V DD 200 A 100 V (BR)DSS 0 25 Starting T , Junction Temperature ( TOP 29A 51A BOTTOM 72A 50 75 100 125 150 ° J Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current Sampling Resistors www ...

Page 7

... P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% IRFZ48VPbF + - V =10V ...

Page 8

... IRFZ48VPbF EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 ASSEMBLED ON WW 19, 2000 IN THE ASSEMBLY LINE "C" Note: "P" in ass embly line pos ition indicates "Lead - Free" Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ IR WORLD HEADQUARTERS: 233 Kansas St ...

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