IRFZ48VPBF International Rectifier, IRFZ48VPBF Datasheet - Page 7

• Manufacturer Part Number: IRFZ48VPBF
• Description: MOSFET N-CH 60V 72A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ48VPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 72A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 1985pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 72 A
• Gate Charge, Total: 110 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 150 W
• Resistance, Drain To Source On: 12 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 157 ns
• Time, Turn-on Delay: 7.6 ns
• Transconductance, Forward: 35 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 2 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 72 A
• Mounting Style: Through Hole
• Gate Charge Qg: 73.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ48VPBF

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
IRFZ48VPbF
+
-
7