IRF2807PBF International Rectifier, IRF2807PBF Datasheet - Page 4

• Manufacturer Part Number: IRF2807PBF
• Description: MOSFET N-CH 75V 82A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF2807PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 82A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 3820pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 82 A
• Gate Charge, Total: 160 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 230 W
• Resistance, Drain To Source On: 13 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 49 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 38 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 82 A
• Mounting Style: Through Hole
• Gate Charge Qg: 106.7 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.013Ohm
• Drain-source On-volt: 80V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF2807PBF

4
7000
6000
5000
4000
3000
2000
1000
1000
100
0.1
0
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
T = 175 C
Drain-to-Source Voltage
J
Coss
Crss
Ciss
V
V DS , Drain-to-Source Voltage (V)
0.4
SD
Forward Voltage
°
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.8
T = 25 C
J
1.2
10
°
f = 1 MHZ
1.6
V
GS
SHORTED
2.0
= 0 V
2.4
100
1000
100
10
1
20
16
12
Fig 8. Maximum Safe Operating Area
8
4
0
1
0
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
I =
D
V DS , Drain-toSource Voltage (V)
43A
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V
V
V
80
DS
DS
DS
= 60V
= 37V
= 15V
FOR TEST CIRCUIT
100
SEE FIGURE
10msec
100µsec
1msec
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120
1000
13
160