IRF2807PBF International Rectifier, IRF2807PBF Datasheet - Page 7

• Manufacturer Part Number: IRF2807PBF
• Description: MOSFET N-CH 75V 82A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF2807PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 82A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 3820pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 82 A
• Gate Charge, Total: 160 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 230 W
• Resistance, Drain To Source On: 13 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 49 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 38 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 82 A
• Mounting Style: Through Hole
• Gate Charge Qg: 106.7 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.013Ohm
• Drain-source On-volt: 80V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF2807PBF

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Re-Applied
Voltage
Reverse
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Waveform
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Body Diode
Period
Body Diode Forward
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