IRF6729MTRPBF International Rectifier, IRF6729MTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF6729MTRPBF
• Description: MOSFET N-CH 30V 31A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6729MTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 63nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6030pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ˆ
‰
Notes:
P
P
P
T
T
T
R
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
ƒ Surface mounted on 1 in. square Cu
www.irf.com
P
J
STG
D
D
D
θJA
θJA
θJA
θJC
θJ-PCB
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
(still air).
@T
@T
@T
A
A
C
= 25°C
= 70°C
= 25°C
0.01
100
0.1
10
1E-005
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1
D = 0.50
0.02
0.01
0.05
0.20
0.10
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
0.0001
(At lower pulse widths Zth
SINGLE PULSE
( THERMAL RESPONSE )
fl
f
jl
kl
0.001
l
Parameter
Parameter
Ã
t 1 , Rectangular Pulse Duration (sec)
‰
small clip heatsink (still air)
0.01
JA
τ
J
τ
J
τ
& ZTH
Š
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
R
θ
R
is measured at
JC
1
R
1
are combined)
0.1
τ
2
R
τ
2
2
R
2
with
R
τ
T
3
3
R
τ
3
J
3
Typ.
12.5
of approximately 90°C.
–––
–––
1.0
20
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
R
1
4
τ
4
R
4
-40 to + 150
4
τ
A
footprint full size board with
metalized back and with small
clip heatsink (still air)
Max.
0.022
τ
‰ Mounted on minimum
104
270
A
2.8
1.8
Ri (°C/W)
14.507
8.742
18.806
2.945
ƒ
Max.
10
–––
–––
–––
1.2
45
12.335077
0.1865935
1.9583548
0.0065404
τi (sec)
100
Units
Units
°C/W
W/°C
°C
W
3