IRF6729MTRPBF International Rectifier, IRF6729MTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF6729MTRPBF
• Description: MOSFET N-CH 30V 31A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6729MTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 63nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6030pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
100000
10000
1000
1000
1000
Fig 6. Typical Transfer Characteristics
0.01
100
100
100
0.1
0.1
10
10
Fig 4. Typical Output Characteristics
1
1
0.1
1
1
V DS = 15V
≤60µs PULSE WIDTH
C oss
C iss
C rss
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 150°C
T J = 25°C
T J = -40°C
1
2
2.5V
f = 1 MHZ
10
≤ 60µs PULSE WIDTH
Tj = 25°C
10
3
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
100
4
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
2.0
1.5
1.0
0.5
10
10
1
8
6
4
2
0
-60 -40 -20 0
0.1
0
Fig 5. Typical Output Characteristics
Fig 9. Typical On-Resistance vs.
T J = 25°C
I D = 31A
Drain Current and Gate Voltage
V DS , Drain-to-Source Voltage (V)
2.5V
T J , Junction Temperature (°C)
50
I D , Drain Current (A)
1
20 40 60 80 100 120 140 160
V GS = 10V
V GS = 4.5V
≤ 60µs PULSE WIDTH
Tj = 150°C
100
10
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
TOP
BOTTOM
150
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VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
200