IRF6729MTRPBF International Rectifier, IRF6729MTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF6729MTRPBF
• Description: MOSFET N-CH 30V 31A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6729MTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 63nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6030pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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1000
200
150
100
100
10
50
0
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
25
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
75
T J = 150°C
T J = 25°C
T J = -40°C
100
Fig 14. Maximum Avalanche Energy vs. Drain Current
V GS = 0V
1200
1000
125
800
600
400
200
0
25
150
Starting T J , Junction Temperature (°C)
50
75
100
TOP
BOTTOM 25A
Fig 13. Typical Threshold Voltage vs. Junction
1000
2.4
2.2
2.0
1.8
1.6
1.4
100
0.1
10
1
-75 -50 -25
0.01
Fig11. Maximum Safe Operating Area
125
T A = 25°C
T J = 150°C
Single Pulse
I D
1.3A
2.2A
DC
V DS , Drain-to-Source Voltage (V)
I D = 10mA
150
0.10
T J , Temperature ( °C )
OPERATION IN THIS AREA LIMITED
BY R DS (on)
Temperature
0
10msec
25
1.00
50
100µsec
1msec
75 100 125 150
10.00
100.00
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