IXFP76N15T2 IXYS, IXFP76N15T2 Datasheet - Page 2

• Manufacturer Part Number: IXFP76N15T2
• Description: MOSFET N-CH 150V 76A TO-220
• Manufacturer: IXYS
• Series: TrenchT2™ HiPerFET™r

Specifications of IXFP76N15T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 76
• Rds(on), Max, Tj=25°c, (?): 0.02
• Ciss, Typ, (pf): 5800
• Qg, Typ, (nc): 97
• Trr, Typ, (ns): 69
• Pd, (w): 350
• Rthjc, Max, (k/w): 0.43
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Notes: 1.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
2. On through-hole packages, R
location must be 5mm or less from the package body.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
V
Repetitive, Pulse width limited by T
V
V
V
I
Test Conditions
Resistive Switching Times
V
R
TO-220
Test Conditions
I
-di/dt = 100A/μs
V
F
F
DS
GS
GS
GS
GS
R
G
= 38A, V
= 38A, V
= 75V
= 10V, I
= 0V, V
= 0V
= 5Ω (External)
= 10V, V
= 10V, V
ADVANCE TECHNICAL INFORMATION
GS
GS
DS
D
DS
DS
= 0.5 • I
= 0V, Note 1
= 0V
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 0.5 • I
= 0.5 • I
Kelvin test contact
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
50
6,162,665
6,259,123 B1
6,306,728 B1
5800
Typ.
Typ.
0.50
490
197
5.7
80
85
97
29
30
69
17
25
14
19
Max.
Max.
0.43 °C/W
300
1.5
6,404,065 B1
6,534,343
6,583,505
76
°C/W
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-263 (IXFA) Outline
TO-220 (IXFP) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
3 - Source
14.61
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Min.
Millimeter
0
7,005,734 B2
7,063,975 B2
IXFA76N15T2
IXFP76N15T2
10.41
15.88
Max.
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
BSC
2.79
1.40
1.78
0.13
1. Gate
2. Collector
3. Emitter
4. Collector
Side
Bottom
2 - Drain
4 - Drain
Min.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
7,157,338B2
Inches
0
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.005