IXFP76N15T2 IXYS, IXFP76N15T2 Datasheet - Page 3

• Manufacturer Part Number: IXFP76N15T2
• Description: MOSFET N-CH 150V 76A TO-220
• Manufacturer: IXYS
• Series: TrenchT2™ HiPerFET™r

Specifications of IXFP76N15T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 76
• Rds(on), Max, Tj=25°c, (?): 0.02
• Ciss, Typ, (pf): 5800
• Qg, Typ, (nc): 97
• Trr, Typ, (ns): 69
• Pd, (w): 350
• Rthjc, Max, (k/w): 0.43
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4.6
4.2
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0.0
0.0
0
V
20
GS
0.2
0.5
Fig. 5. R
= 10V
40
0.4
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
60
0.6
1.5
Normalized to I
80
Drain Current
I
V
0.8
V
D
2.0
@ 150ºC
100
@ 25ºC
DS
DS
- Amperes
V
GS
- Volts
- Volts
= 15V
120
1.0
2.5
10V
7V
V
GS
6V
5V
4V
= 15V
T
D
140
J
10V
7V
6V
5V
= 38A Value vs.
= 175ºC
1.2
3.0
T
160
J
= 25ºC
1.4
3.5
180
1.6
4.0
200
220
1.8
4.5
240
200
160
120
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
80
40
80
70
60
50
40
30
20
10
0
0
-50
-50
0
V
GS
2
-25
-25
Fig. 4. R
V
= 10V
GS
Fig. 6. Drain Current vs. Case Temperature
4
Fig. 2. Extended Output Characteristics
= 15V
10V
0
0
6
DS(on)
8V
6V
5V
7V
T
Junction Temperature
C
25
25
8
T
- Degrees Centigrade
Normalized to I
J
- Degrees Centigrade
V
10
DS
50
50
@ 25ºC
- Volts
12
75
75
14
D
I
IXFA76N15T2
IXFP76N15T2
D
= 38A Value vs.
100
100
16
= 76A
18
125
125
I
D
= 38A
20
150
150
22
175
175
24