IXFP76N15T2 IXYS, IXFP76N15T2 Datasheet - Page 4

• Manufacturer Part Number: IXFP76N15T2
• Description: MOSFET N-CH 150V 76A TO-220
• Manufacturer: IXYS
• Series: TrenchT2™ HiPerFET™r

Specifications of IXFP76N15T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 76
• Rds(on), Max, Tj=25°c, (?): 0.02
• Ciss, Typ, (pf): 5800
• Qg, Typ, (nc): 97
• Trr, Typ, (ns): 69
• Pd, (w): 350
• Rthjc, Max, (k/w): 0.43
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
240
200
160
120
140
120
100
100
80
40
80
60
40
20
10
0
0
0.0
3.5
0
f
= 1 MHz
0.2
5
4.0
0.4
Fig. 9. Forward Voltage Drop of
10
4.5
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
15
Intrinsic Diode
T
0.8
V
J
5.0
GS
= 150ºC
V
V
SD
DS
- Volts
T
1.0
J
- Volts
20
- Volts
= 150ºC
- 40ºC
25ºC
5.5
1.2
25
C rss
C iss
C oss
1.4
6.0
30
T
J
1.6
= 25ºC
6.5
35
1.8
7.0
2.0
40
1,000.0
100.0
10.0
140
120
100
1.0
0.1
80
60
40
20
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
R
DS
V
I
I
T
T
Single Pulse
D
G
DS
J
C
(on) Limit
10
= 38A
= 10mA
= 175ºC
= 25ºC
20
= 75V
Fig. 12. Forward-Bias Safe Operating Area
20
40
Fig. 8. Transconductance
30
10
Fig. 10. Gate Charge
60
Q
40
G
V
I
DS
- NanoCoulombs
D
- Amperes
- Volts
50
80
T
J
= - 40ºC
150ºC
60
25ºC
100
IXFA76N15T2
IXFP76N15T2
DC
100
70
120
25µs
100µs
1ms
10ms
IXYS REF: F_76N15T2(4V)7-02-09
80
140
90
1000
100
160