IRFP250MPBF International Rectifier, IRFP250MPBF Datasheet - Page 3

• Manufacturer Part Number: IRFP250MPBF
• Description: MOSFET N-CH 200V 30A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP250MPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 2159pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 214 W
• Mounting Style: Through Hole
• Gate Charge Qg: 82 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
0.01
1000
100
0.1
100
0.1
10
10
1
1
0.1
4.0
TOP
BOTTOM
T = 175 C
J
V
DS
5.0
V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
T = 25 C
, Drain-to-Source Voltage (V)
°
J
, Gate-to-Source Voltage (V)
6.0
1
°
4.5V
7.0
20µs PULSE WIDTH
T = 25 C
J
V
20µs PULSE WIDTH
DS
10
8.0
= 50V
°
9.0
100
10.0
1000
100
0.1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20 0
TOP
BOTTOM
I =
D
30A
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
J
IRFP250MPbF
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
T = 175 C
J
10
4.5V
°
V
GS
°
=
10V
100
3