IRFP250MPBF International Rectifier, IRFP250MPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP250MPBF
• Description: MOSFET N-CH 200V 30A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP250MPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 2159pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 214 W
• Mounting Style: Through Hole
• Gate Charge Qg: 82 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFP250MPbF
1000
4
100
5000
4000
3000
2000
1000
0.1
10
1
0.2
0
1
T = 175 C
0.4
J
V
Coss
SD
Ciss
Crss
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
0.6
°
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
0.8
T = 25 C
J
1.0
f = 1 MHZ
100
°
1.2
V
GS
1.4
= 0 V
1000
1.6
1000
100
10
1
16
12
1
8
4
0
T
T
Single Pulse
C
J
0
I =
= 25 C
= 175 C
D
OPERATION IN THIS AREA LIMITED
V
18A
DS
°
°
20
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
10
BY R
40
DS(on)
60
V
V
V
100
DS
DS
DS
= 160V
= 100V
= 40V
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10us
100us
1ms
10ms
80
1000
100